High mobility oxides: Engineered structures to overcome intrinsic performance limitations of transparent conducting oxides
Identifieur interne : 00BE35 ( Main/Repository ); précédent : 00BE34; suivant : 00BE36High mobility oxides: Engineered structures to overcome intrinsic performance limitations of transparent conducting oxides
Auteurs : RBID : Pascal:03-0465312Descripteurs français
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- 7363H, 7350D, 7361L, 7321F, 7361G, Etude théorique, Simulation ordinateur, Puits quantique semiconducteur, Densité porteur charge, Affinité électronique, Conductivité électrique, Mobilité porteur charge, Indium composé, Etain composé, Zinc composé, Semiconducteur, Semiconducteur II-VI, Structure bande.
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Abstract
After a decade of intensive materials discovery and optimization, no single transparent conducting oxide has exceeded the intrinsic electrical performance limits suggested in 1992. High mobility oxide (HMO) structures are proposed as an alternative design that can surpass single material performance. Based on oxides with different electron affinities, direct simulations indicate that HMOs could obtain conductivity values >4.2×104 S/cm. The conductivity is very sensitive to the quantum well thickness, and the individual layers must be <5 nm thick in order for HMO structures to surpass the intrinsic limits of a single material. Thus, a high degree of control over crystal structure and interface quality would be required to realize these performance levels. © 2003 American Institute of Physics.
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High mobility oxide (HMO) structures are proposed as an alternative design that can surpass single material performance. Based on oxides with different electron affinities, direct simulations indicate that HMOs could obtain conductivity values >4.2×10<sup>4</sup> S/cm. The conductivity is very sensitive to the quantum well thickness, and the individual layers must be <5 nm thick in order for HMO structures to surpass the intrinsic limits of a single material. 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